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M1603B X-band Pulsed GaN High Power Amplifier Module
Model：M1603B X-band Pulsed GaN High Power Amplifier Module
The M1603B is a X-band high power amplifier module operating from 8.5 to 9.7 GHz range with 13 Watts typical output pulsed power. M1603B uses advanced high performance GaN microwave device technology with long term reliability. The M1603B is fully matched to 50 Ohm at both RF ports that allows simple system integration. The module is made in metal-based HTCC hermetically sealed package for optimal electrical and thermal performance.
M1603B-Datesheet
Features:
- Frequency Range 8.5 – 9.7 GHz
- 13 Watts RF Output Pulsed Power
- 33% Typical PAE
- 50 Ohm Internally Matched
- Hermetically sealed package
- High reliability
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Applications:
- Communications Systems
- Radar Systems
- Test Instrumentation
- Weather Monitoring
- Point To Point Radio
